In Situ Study on Cu-to-Cu Thermal Compression Bonding

Cu-to-Cu thermal compression bonding (TCB) has emerged as a promising solution for ultrafine pitch packaging in 3D integrated circuit technologies. Despite the progress made by conventional TCB methods achieving good mechanical strength of Cu bonds, processes generally require high temperature and pressure, which may degrade performance reliability device. Therefore, it is imperative to investigate processing parameters understand mechanism achieve effective at low pressure. Here, we developed an situ technique inside scanning electron microscope. The method enables real-time observation development, provides critical insights into how texture microstructure bumps influence creep surface diffusion during process. This work features strategy advance our understanding mechanisms insight tailoring